issue 2 - may 2006 1 www.zetex.com ? zetex semiconductors plc 2006 zxtn25020dfh 20v sot23 npn medium power transistor summary bv cex > 100v; bv (br)ceo > 20v bv eco > 5v; i c(cont) = 4.5a r ce(sat) = 28 m typical v ce(sat) < 43 mv @ 1a; p d = 1.25w complementary part number zxtp25020dfh description advanced process capability and package design have been used to maximize the power handling and pe rformance of this small outline transistor. the compact size and ratings of this device make it ideally suited to applications where space is at a premium. features ? higher power dissipation sot23 package high peak current low saturation voltage 100v forward blocking voltage 5v reverse blocking voltage applications dc - dc converters mosfet and igbt gate driving led driver motor drive relay, lamp and solenoid drive ordering information device marking 016 device reel size (inches) tape width quantity per reel ZXTN25020DFHTA 7 8mm 3000 c e b c e b pinout - top view
zxtn25020dfh issue 2 - may 2006 2 www.zetex.com ? zetex semiconductors plc 2006 absolute maximum ratings notes: (a) for a device surface mounted on 15mm x 15mm x 1.6mm fr 4 pcb with high coverage of single sided 1oz copper, in still air conditions. (b) mounted on 25mm x 25mm x 1.6mm fr4 pcb with a high coverage of single sided 2 oz copper in still air conditions. (c) mounted on 50mm x 50mm x 1.6mm fr4 pcb with a high coverage of single sided 2 oz copper in still air conditions. (d) as (c) above measured at t<5secs. parameter symbol limit unit collector-base voltage v cbo 100 v collector-emitter voltage (forward blocking) v cex 100 v collector-emitter voltage v ceo 20 v emitter-collector voltage (reverse blocking) v eco 5v emitter-base voltage v ebo 7v continuous collector current (c) i c 4.5 a base current i b 1a peak pulse current i cm 15 a power dissipation at t a =25c (a) p d 0.73 w linear derating factor 5.84 mw/c power dissipation at t a =25c (b) p d 1.05 w linear derating factor 8.4 mw/c power dissipation at t a =25c (c) p d 1.25 w linear derating factor 9.6 mw/c power dissipation at t a =25c (d) p d 1.81 w linear derating factor 14.5 mw/c operating and storage temperature range t j , t stg - 55 to 150 c thermal resistance parameter symbol limit unit junction to ambient (a) r ja 171 c/w junction to ambient (b) r ja 119 c/w junction to ambient (c) r ja 100 c/w junction to ambient (d) r ja 69 c/w
zxtn25020dfh issue 2 - may 2006 3 www.zetex.com ? zetex semiconductors plc 2006 characteristics
zxtn25020dfh issue 2 - may 2006 4 www.zetex.com ? zetex semiconductors plc 2006 electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. typ. max. unit conditions collector emitter breakdown voltage (base open) bv ceo 20 35 v i c = 10ma (*) notes: (*) measured under pulsed conditions. pulse width 300 s; duty cycle 2%. emitter-collector breakdown voltage (reverse blocking) bv ecx 68 vi e = 100 a, r bc < 1k or 0.25v > v bc > -0.25v emitter-collector breakdown voltage (base open) bv eco 56 vi e = 100ma, emitter base breakdown voltage bv ebo 78.3 vi e = 100ma collector cut-off current i cbo <1 50 20 na a v cb = 100v v cb = 100v, t amb = 100c collector emitter cut-off current i cex -100nav ce = 100v; r be < 1k or -1v < v be < 0.25v emitter cut-off current i ebo <1 50 na v eb = 5.6v collector emitter saturation voltage v ce(sat) 35 43 mv i c = 1a, i b = 100ma (*) 55 70 mv i c = 1a, i b = 20ma (*) 90 110 mv i c = 2a, i b = 40ma (*) 125 170 mv i c = 2a, i b = 20ma (*) 125 150 mv i c = 4,5a, i b = 450ma (*) 205 265 mv i c = 4.5a, i b = 90ma (*) base emitter saturation voltage v be(sat) 900 1000 mv i c = 4.5a, i b = 90ma (*) base emitter turn-on voltage v be(on) 820 900 mv i c = 4.5a, v ce = 2v (*) static forward cu rrent transfer ratio h fe 300 450 900 i c = 10ma, v ce = 2v (*) 250 380 i c = 2a, v ce = 2v (*) 120 170 i c = 4.5a, v ce = 2v (*) 15 i c = 15a, v ce = 2v (*) transition frequency f t 215 mhz i c = 50ma, v ce = 10v f = 100mhz output capacitance c obo 16.5 25 pf v cb = 10v, f = 1mhz (*) delay time t (d) 68 ns v cc = 10v. i c = 1a, i b1 = i b2 = 10ma. rise time t (r) 72 ns storage time t (s) 361 ns fall time t (f) 64 ns
zxtn25020dfh issue 2 - may 2006 5 www.zetex.com ? zetex semiconductors plc 2006 characteristics
zxtn25020dfh issue 2 - may 2006 6 www.zetex.com ? zetex semiconductors plc 2006 for international sales offices visit www.zetex.com/offices zetex products are distributed worldwide. for details, see www.zetex.com/salesnetwork this publication is issued to provide outline information only whic h (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specif ication, design, price or conditions of supply of any product or service. europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial highway hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia ltd) 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park, chadderton oldham, ol9 9ll united kingdom telephone: (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com package outline - sot23 note: controlling dimensions are in millimeters. ap proximate dimensions are provided in inches dim. millimeters inches dim. millimeters inches min. max. min. max. min. max. max. max. a 2.67 3.05 0.105 0.120 h 0.33 0.51 0.013 0.020 b 1.20 1.40 0.047 0.055 k 0.01 0.10 0.0004 0.004 c - 1.10 - 0.043 l 2.10 2.50 0.083 0.0985 d 0.37 0.53 0.015 0.021 m 0.45 0.64 0.018 0.025 f 0.085 0.15 0.0034 0.0059 n 0.95 nom 0.0375 nom g 1.90 nom 0.075 nom - - - - - l n h g a c f b m k d 3 leads
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